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SMD Schottky Barrier Rectifiers Save Space in Automotive

瀏覽次數:375

Vishay Intertechnology introduced six new surface-mount Schottky barrier rectifiers in the low-profile DO-219AB (SMF) package.

Providing space-saving alternatives to SMA and SOD123W packages, the Vishay Semiconductors SS1FL3, SS2FL3, SS1FL4, SS2FL4, SS1FH10, and SS2FH10 provide reverse voltages of 30 V, 40 V, and 100 V and offer high current ratings up to 2 A for automotive and commercial applications, and industrial applications such as freewheeling diodes for inductive loads like relays, valves, and transformers.

With a typical height of 0.98 mm, the rectifiers' SMF package is 46 % lower than the conventional SMA package — reducing weight by 23 % and saving 49 % more PCB space — and 2 % lower than the SOD123W package while sharing the same footprint size.

The SMF (flat lead) provides improved thermal resistance of 21 °C/W from junction to lead, compared with the conventional SMA (J-lead) package with thermal resistance of 28 °C/W from junction to lead. Offering low forward voltage drops down to 0.31 V at 1 A, the devices reduce power loss and improve efficiency in high-frequency inverters, DC/DC converters, and freewheeling and polarity protection diodes.

All devices released today are available in AEC-Q101-qualified versions. The rectifiers feature a maximum operating junction temperature to +175 °C and an MSL moisture sensitivity level of 1, per J-STD-020, LF maximum peak of 260 °C. Compliant with RoHS Directive 2011/65/EU and halogen-free according to JEDEC JS709A standards, the devices are wave- and reflow-solderable.

稀土棋局下的台灣解方:從供應鏈韌性看關鍵礦物合作新契機
特別企劃半導體

稀土棋局下的台灣解方:從供應鏈韌性看關鍵礦物合作新契機

稀土與關鍵礦物已成全球科技競爭與經濟安全的重要戰略資源。面對供應鏈高度集中與地緣風險升高,台灣如何透過國際合作、技術替代、戰略儲備與城市採礦,建立自主且具韌性的關鍵礦物供應體系?

稀土與關鍵礦物已成全球科技競爭與經濟安全的重要戰略資源。面對供應鏈高度集中與地緣風險升高,台灣如何透過國際合作、技術替代、戰略儲備與城市採礦,建立自主且具韌性的關鍵礦物供應體系?

關鍵字:power