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Fast 60V High Side N-Channel MOSFET Driver Provides 100% Duty Cycle Capability

瀏覽次數:1099

Analog Devices announces the LTC7004, a high speed, high side N-channel MOSFET driver that operates up to a 60V supply voltage. Its internal charge pump fully enhances an external N-channel MOSFET switch, enabling it to remain on indefinitely. The LTC7004’s powerful 1Ω gate driver can easily drive large gate capacitance MOSFETs with very short transition times and 35ns propagation delays, well suited for both high frequency switching and static switch applications.

The LTC7004 is designed to receive a ground-referenced, low voltage digital input signal and quickly drive a high side N-channel power MOSFET whose drain can be between 0V and 60V (65V abs max). The LTC7004 operates from a 3.5V to 15V driver bias supply range with an adjustable undervoltage lockout. The fast 13ns rise and fall times, when driving a 1,000pF load, minimize switching losses. Other features include an adjustable turn-on slew rate and an adjustable overvoltage lockout.

The LTC7004 is available in the MSOP-10 package with pins configured for high voltage spacing. It is available in three operating junction temperature ranges of extended and industrial versions from –40°C to 125°C, a high temperature automotive version from –40°C to 150°C and a military grade from –55°C to 150°C. The 1,000-piece price starts at $2.05 each.

稀土棋局下的台灣解方:從供應鏈韌性看關鍵礦物合作新契機
特別企劃半導體

稀土棋局下的台灣解方:從供應鏈韌性看關鍵礦物合作新契機

稀土與關鍵礦物已成全球科技競爭與經濟安全的重要戰略資源。面對供應鏈高度集中與地緣風險升高,台灣如何透過國際合作、技術替代、戰略儲備與城市採礦,建立自主且具韌性的關鍵礦物供應體系?

稀土與關鍵礦物已成全球科技競爭與經濟安全的重要戰略資源。面對供應鏈高度集中與地緣風險升高,台灣如何透過國際合作、技術替代、戰略儲備與城市採礦,建立自主且具韌性的關鍵礦物供應體系?