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New Vishay Intertechnology TMBS Rectifiers in MicroSMP Package Save Significant Space

瀏覽次數:969

Vishay Intertechnology expanded its offering of surface-mount TMBS Trench MOS Barrier Schottky rectifiers with 10 new 1 A and 2 A devices in the eSMP series MicroSMP (DO-219AD) package. Providing space-saving alternatives to Schottky rectifiers in the SOD123W, the Vishay General Semiconductor devices feature reverse voltages from 45 V to 150 V and include the industry's first 2 A TMBS rectifiers in the MicroSMP to deliver forward voltage as low as 0.40 V.

Currently, Schottky rectifiers with current ratings to 2 A are typically available in the SOD123W and SMA packages. The devices released today increase power density by offering this high forward current in the smaller MicroSMP. Measuring 2.5 mm by 1.3 mm with a low 0.65 mm profile, the package is 35 % thinner than the SOD123W while occupying 45 % less board space. For excellent thermal performance, the MicroSMP features an asymmetric leadframe design.

With their forward voltage drop down to 0.36 V for 1 A devices and 0.40 V for 2 A devices, the rectifiers reduce power loss and improve efficiency in low voltage, high frequency inverters, DC/DC converters, and freewheeling and polarity protection diodes for commercial and industrial applications. The devices are also available in an AEC-Q101 qualified version for automotive applications.

The new rectifiers feature a maximum operating junction temperature up to +175 °C and an MSL moisture sensitivity level of 1, per J-STD-020, LF maximum peak of +260 °C. Ideal for automated placement, the devices are RoHS-compliant and halogen-free.

稀土棋局下的台灣解方:從供應鏈韌性看關鍵礦物合作新契機
特別企劃半導體

稀土棋局下的台灣解方:從供應鏈韌性看關鍵礦物合作新契機

稀土與關鍵礦物已成全球科技競爭與經濟安全的重要戰略資源。面對供應鏈高度集中與地緣風險升高,台灣如何透過國際合作、技術替代、戰略儲備與城市採礦,建立自主且具韌性的關鍵礦物供應體系?

稀土與關鍵礦物已成全球科技競爭與經濟安全的重要戰略資源。面對供應鏈高度集中與地緣風險升高,台灣如何透過國際合作、技術替代、戰略儲備與城市採礦,建立自主且具韌性的關鍵礦物供應體系?