STMicroelectronics have made ST's BCD8sP technology platform for smart-power ICs available for prototyping to universities, research labs, and design companies through the silicon brokerage services provided by CMP.
This is the first time ST has released BCD design capability to third parties, which reflects the growing importance of state-of-the-art power integration in the drive for higher performance in computing, consumer, and industrial applications of the future.
"We expect CMP to help us identify and support innovative projects, and hopefully establish long-term connections with talented designers and research organizations," said Claudio Diazzi, Sense & Power and Automotive Sector, Front-End Manufacturing and Technology R&D, VP-Smart Power Technologies in STMicroelectronics.
The most advanced of ST's Bipolar-CMOS-DMOS (BCD) technologies in production, the BCD8sP process enables the integration of analog and logic circuitry with high-voltage power components to produce single-chip devices for complex power-conversion and control applications.
The process has enabled ST to leapfrog its competitors in important smart-power applications such as Hard Disk Drive (HDD) controllers, motor controllers, and power-management ICs for equipment such as smartphones, tablets, and computer servers.
The introduction in CMP's catalog of ST's BCD8sP process builds on the successful collaboration that has allowed universities and design firms to access leading-edge and previous bulk CMOS generations including 28nm, 65nm, and 130nm. CMP's clients also have access to 28nm FD-SOI and 130nm SOI (Silicon-On-Insulator), as well as 130nm SiGe processes from STMicroelectronics.
"With ST's world-class BCD process in our portfolio, we can now provide even stronger support for advanced smart-power design projects," said Jean-Christophe Crebier, Director of CMP. "Many top universities worldwide have already taken advantage of the collaboration between CMP and ST. About 300 projects have been designed in ST's 90nm process, more than 350 in bulk 65nm, and already over 50 projects prototyped in 28nm FD-SOI."
