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eMemory’s NeoFuse Implemented in HV Process for OLED Application

瀏覽次數:1359

HSINCHU, Taiwan – NVM IP provider eMemory announces today its NeoFuse IP has been extensively implemented in High Voltage(HV) platforms across all process nodes from 0.11um to 40nm in six leading foundries responding to the rising demand for Organic Light Emitting Diode (OLED) display applications.

eMemory’s NeoFuse has proven its superiority with wide range operation, good reliability, flexible usage, and high security across process platforms. The specification advantages that NeoFuse IP successfully demonstrated in 40nm HV process platform have been carried over to the derivative HV process platform with 8V Medium Voltage (MV) device for OLED applications. eMemory’s NeoFuse IP has a wide operating voltage of 2.3V to 4.5V in order to facilitate early readiness for data setting and trimming and so save power and make product design more flexible.

eMemory’s NVM IP solutions for Display Driver IC(DDI) and Touch with Display Driver IC(TDDI) have been well adopted by foundries all over the world. The total number of new tape outs by the end of 2016 was over 460, and wafer shipments exceeded 7M pcs (8’’ equivalent).

稀土棋局下的台灣解方:從供應鏈韌性看關鍵礦物合作新契機
特別企劃半導體

稀土棋局下的台灣解方:從供應鏈韌性看關鍵礦物合作新契機

稀土與關鍵礦物已成全球科技競爭與經濟安全的重要戰略資源。面對供應鏈高度集中與地緣風險升高,台灣如何透過國際合作、技術替代、戰略儲備與城市採礦,建立自主且具韌性的關鍵礦物供應體系?

稀土與關鍵礦物已成全球科技競爭與經濟安全的重要戰略資源。面對供應鏈高度集中與地緣風險升高,台灣如何透過國際合作、技術替代、戰略儲備與城市採礦,建立自主且具韌性的關鍵礦物供應體系?

關鍵字:OLED