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Intel and Micron Increase 3D XPoint Manufacturing Capacity with IM Flash Fab Expansion

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Intel and Micron announced the completion of an expansion to Building 60 (B60) at the IM Flash facilities in Lehi, Utah.

The expanded fab will produce 3D XPoint memory media, a building block of Intel Optane technology that includes Intel Optane memory for clients, the recently announced Intel Optane SSD 900P Series and new capacities and form factors of the Intel Optane SSD DC P4800X Series.

The IM Flash joint venture was created in 2006 to manufacture non-volatile memory for both Intel and Micron, starting with NAND for use in SSDs, phones, tablets and more. In 2015, IM Flash began manufacturing 3D XPoint technology, the first entirely new memory media in 25 years. The technology was developed to meet the quickly expanding data needs for all types of customers. 3D XPoint technology uses a crosspoint structure to deliver a cell and array architecture that can switch states significantly faster than NAND.

“Intel Optane technology is changing the way we interact with the incredible amounts of data being created every day, and this expansion will help us meet demand for the extraordinary products we’ve introduced this year and the exciting roadmap ahead,” said Rob Crooke, senior vice president and general manager of the Non-Volatile Memory (NVM) Solutions Group at Intel Corporation.

“When we bring data closer to the CPU and enable blisteringly fast access to that data, we can empower customers to create incredible experiences and deliver data results we’ve never had before – faster MRIs, smoother gaming experiences, real time analytics and so much more.”

稀土棋局下的台灣解方:從供應鏈韌性看關鍵礦物合作新契機
特別企劃半導體

稀土棋局下的台灣解方:從供應鏈韌性看關鍵礦物合作新契機

稀土與關鍵礦物已成全球科技競爭與經濟安全的重要戰略資源。面對供應鏈高度集中與地緣風險升高,台灣如何透過國際合作、技術替代、戰略儲備與城市採礦,建立自主且具韌性的關鍵礦物供應體系?

稀土與關鍵礦物已成全球科技競爭與經濟安全的重要戰略資源。面對供應鏈高度集中與地緣風險升高,台灣如何透過國際合作、技術替代、戰略儲備與城市採礦,建立自主且具韌性的關鍵礦物供應體系?

關鍵字:NAND Flash