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8Gb DDR3 Components and 16GB Unbuffered DIMMs & SO-DIMMs

瀏覽次數:2270

I’M Intelligent Memory, a Hong Kong based fabless DRAM manufacturer, announces availability of the world's first 8 Gigabit (Gb) DDR3 components with a single chip-select, doubling the amount of memory per chip compared to other DDR3 DRAM devices on the market. Based on these new 8Gb components, I’M is also introducing the first 16 Gigabyte (GB) DDR3 UDIMM and SO-DIMM memory modules with optional ECC error-correction.

The I’M 8Gb components are 100% compatible with the JEDEC standard pinout, timing and row/column/bank addressing, providing the simplest path to higher density DDR3 upgrades. These devices allow for a new level of memory capacity without altering existing board-layouts or designs.

Orderable devices include a x8 (1Gx8) configuration in FBGA 78 ball package, a x16 (512Mx16) type in FBGA 96 ball package as well as a x32 (256Mx32) configuration in FBGA 136 ball package. In addition, I’M offers DDR3L low-voltage (1.35V) versions of these devices. The products are available in commercial and industrial temperature ranges.

Based on their new 8Gb device, I’M releases the very first 16GB DDR3 240 Pin unbuffered DIMMs (UDIMMs) and 204 Pin SO-DIMMs to the market. These new high-capacity memory modules are also available with a 72 Bit width for ECC error correction.

The 8Gb components and 16GB modules have been verified to be compatible with processors and microcontrollers from AMD, Cavium, Freescale, Tilera and many others.

Intel currently supports 8Gb components and 16GB modules only on their Atom C2000 series (Codename 'Avoton') and Atom E3800 (Baytrail-I) processor series. New BIOS versions for these platforms are required to use the memory and are available now.

稀土棋局下的台灣解方:從供應鏈韌性看關鍵礦物合作新契機
特別企劃半導體

稀土棋局下的台灣解方:從供應鏈韌性看關鍵礦物合作新契機

稀土與關鍵礦物已成全球科技競爭與經濟安全的重要戰略資源。面對供應鏈高度集中與地緣風險升高,台灣如何透過國際合作、技術替代、戰略儲備與城市採礦,建立自主且具韌性的關鍵礦物供應體系?

稀土與關鍵礦物已成全球科技競爭與經濟安全的重要戰略資源。面對供應鏈高度集中與地緣風險升高,台灣如何透過國際合作、技術替代、戰略儲備與城市採礦,建立自主且具韌性的關鍵礦物供應體系?

關鍵字:DDR3