解鎖新一代3D NAND快閃記憶體的垂直間距微縮 (2025.07.15)
3D NAND快閃記憶體的產品目前配有超過300層堆疊氧化層和字元線層,以滿足位元儲存能力方面的需求。imec正在開發兩項可在不犧牲記憶體運作和可靠度的情況下實現垂直間距微縮的關鍵技術:氣隙整合與電荷捕捉層分離。…
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3D NAND快閃記憶體的產品目前配有超過300層堆疊氧化層和字元線層,以滿足位元儲存能力方面的需求。imec正在開發兩項可在不犧牲記憶體運作和可靠度的情況下實現垂直間距微縮的關鍵技術:氣隙整合與電荷捕捉層分離。…
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隨著物聯網的快速發展,使得各種系統與電子產品資料透過網路緊密相連,在使用者對資料安全與保護機制的高度重視下,激發相關晶片安全防護解決方案的強烈需求。著眼物聯網市場之發展趨勢,全球邏輯製程非揮發性記憶體技術開發及矽智財供應廠商力旺電子與亞洲以…
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