HSINCHU, Taiwan, Global Unichip Corp. (GUC), revealed today that it has successfully silicon proved 16nm DDR4 IP at TSMC, making it one of GUC’s first IP available for TSMC’s 16nm FinFET (16FF) process.
The new 16FF DDR4 PHY IP operates at up to 3.2 gigabytes per second (Gbps), a 50 percent increase in speed over previous generation DDR3 IP, while reducing power by 25 percent at the same speed. It takes full advantage of TSMC’s 16FF process, achieving 3.5Gbps speed on the external loopback test and running write/read operation up to 2.7Gbps with a 2.4Gbps DDR4 DRAM successfully.
The new16FF DDR4 IP features a DRAM link up and 40 percent core power reduction at the same speed compared to DDR3 IP on 28nm technology. GUC’s 16FF DDR4 IP results were first unveiled at the TSMC North America Technology Symposium on April 22, 2014.
The 16FF DDR4 IP is built in a PHY training mode that easily boots, saves evaluation time and optimizes data strobe positioning. Specifications used for the test chip also called for the use of ASE’s Flip Chip package (FCBGA) and multi-layer build up substrate manufactured by Nanya PCB. The new IP targets a variety of high-speed networking and server applications.
“This 16FF DDR4 IP represents a real design breakthrough. It is one of the highest performance DDR4 IP to target TSMC’s 16nm process and represents an early opportunity for advanced technology designers to begin work on their next-generation devices,” said Jim Lai, President, GUC.
